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采用喇曼 (Raman)散射谱、高分辨率电子显微镜 (HRTEM)和原子力显微镜 (AFM)对掺磷纳米硅薄膜的微结构进行了分析 ,并对纳米硅薄膜的传导机制进行了探讨 .结果表明 :掺磷纳米硅薄膜由尺寸为 2～ 4nm的晶粒和 2～ 3个原子层厚的非晶界面构成 ,计算得到薄膜的晶态比为 40 %～ 5 5 % .与本征纳米硅薄膜相比 ,掺磷纳米硅薄膜晶粒尺寸和晶态比没有明显变化 ,电导率却提高了 2个数量级 .随着掺磷浓度增加 ,纳米硅薄膜的晶粒尺寸、晶态比及电导率逐渐增大 .AFM观察表明掺磷纳米硅薄膜由尺寸介于 1 5～ 2 0nm的团簇构成 ,团簇排列具有带状特征
The microstructure of P-doped nano-silicon films was analyzed by Raman scattering spectroscopy, high-resolution electron microscopy (HRTEM) and atomic force microscopy (AFM), and the conduction mechanism of nano-silicon films was also discussed. : The phosphorus-doped nano-silicon film is composed of two to four nanometer size crystal grains and two to three atomic layer thick amorphous interfaces, and the crystallinity ratio of the film is calculated to be 40-55% Compared with the control, the grain size and crystallinity ratio of the phosphorus-doped nano-silicon film did not change significantly, but the conductivity increased by 2 orders of magnitude.With the increase of phosphorus concentration, the grain size, crystallinity ratio and conductivity of the nano- Increase.AFM observations show that the phosphorus-doped nano-silicon film is composed of clusters with sizes ranging from 15 to 20 nm, the arrangement of the clusters has a banded feature