一般说来,由于动态随机存取存贮器集成度高,所以价格便宜,但另一方面它必须有对存贮器进行刷新的控制电路等等麻烦的设计。 莫托洛拉公司为了使以前的动态随机存取存贮器(DRAM)更便于使用,在64K动态随机存取存贮器上附加了刷新控制用的引线(参看图1)。这个附加有刷新控制电路的64K动态随机存取存贮器MCM6664采用了HMOS(高性能金属氧化物半导体)工艺,是运用N沟硅栅技术制造的,所以它的存取时间短。并且由于采用+5V单电源,故可减少功耗,还兼有刷新控制功能,可以说MCM6664型64KDRAM是一种具有非常高综合性能的产品。 In general, DRAMs are inexpensive because of their high level of integration, but on the other hand they have to have troublesome designs such as control circuits that refresh the memory. Motolora has added refresh control leads to the 64K DRAM to make it easier to use with previous DRAMs (see Figure 1). The 64K DRAM with added refresh control circuitry, the HMM (High Performance Metal Oxide Semiconductor) process, is manufactured using N-channel silicon gate technology and therefore has short access times. And because of the use of single +5 V power supply, it can reduce power consumption, but also both refresh control, it can be said MCM6664 64KDRAM is a product with very high overall performance.