论文部分内容阅读
传统的PCB系统级仿真是提取电路的RLC Model,结合IBIS Model来表征整个电路的参数性能,但是随着芯片集成度越来越高,系统的信号频率越来越高,对整个系统的要求也越来越高,单纯的靠ibis Model仿真已经不能非常准确的反应实际的结果。把微波领域中的S参数应用到电路系统中,通过端口能量的传递关系,用频域信号表征时域信号,能更准确的表征整个电路的性能,更优化设计,节约资源。文中介绍了一种内存控制器的仿真方法,利用s参数和Hspice仿真,为后期系统设计,PCB layout设计提供有力的证明依据。
The traditional PCB system-level simulation is the RLC Model of the extraction circuit, and the IBIS Model is used to characterize the performance of the entire circuit. However, as the chip integration becomes higher and higher, the signal frequency of the system is getting higher and higher, Higher and higher, simply by ibis Model simulation can not be very accurate response to the actual results. The S-parameters in the microwave field are applied to the circuit system. Through the transmission relationship of the port energy, the signal in the time domain is characterized by the frequency domain signal, which can more accurately characterize the performance of the entire circuit, optimize the design and save resources. This paper introduces a memory controller simulation method, the use of s parameters and Hspice simulation for the post-system design, PCB layout design to provide a strong evidence.