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LDMOS器件是目前高压集成(HVIC)及功率集成的重要器件。本文提出了该器件的设计及研制结果。采用标准的DMOS工艺已研制成功耐压180V最大输出电流400mA、V_G=4V时跨导为50mV、最小导通电阻50Ω的器件。阈电压通过离子注入剂量调节在1～4V范围。某些参数达到了国外同类器件的水平。所研制的器件与同材料的VDMOS相比,作为双极型模拟电路兼容的高/低压MOS器件,它具有更好的性能。作者希望通过对该器件的研究,进一步推动国内高压集成的发展。
LDMOS devices are currently critical components for high voltage integrated (HVIC) and power integration. This paper presents the device design and development results. Using the standard DMOS process has been successfully developed voltage 180V maximum output current of 400mA, V_G = 4V transconductance of 50mV, the minimum on-resistance of 50Ω devices. Threshold voltage through ion implantation dose adjustment in the 1 ~ 4V range. Certain parameters have reached the level of similar devices abroad. The developed device has better performance as a high / low voltage MOS device compatible with bipolar analog circuits than VDMOS of the same material. The author hopes that through the research of this device, further promote the development of the domestic high-voltage integration.