Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles (TaN-NPs)and sandwiched between Al-doped HfO2 layers to achieve ITO/HfAlO/TaN-NP/HfAlO/ITO RRAM device.Transmission electron microscopy along with energy dispersive spectroscopy confirms the presence of TaN-NPs.X-ray photoelectron spectroscopy suggests that part of TaN converted to tantalum oxynitride(TaOxNy) which plays an important role in stable cycle-to-cycle resistive switching.Charge trapping and oxygen vacancy creation were found to be modified after the inclusion of TaN-NPs inside RRAM struc-ture.Also,HfAlO/TaOxNy interface due to the presence TaN-NPs improves the device-to-device switching reliability by reducing the probability of random rupture/formation of conductive filaments (CFs).DC en-durance of more than 103 cycles and memory data retention up to 104 s was achieved with an insignif-icant variation of different resistance states.Multilevel conductance was attained by controlling RESET voltage with stable data retention in multiple states.The volatile threshold switching was monitored af-ter controlling the CF forming at 200 nA current compliance with high selectivity of～103.Synaptic learn-ing behavior has been demonstrated by spike-rate-dependent plasticity (SRDP).Reliable potentiation and depression processes were observed after the application of suitable negative and positive pulses which shows the capability of the TaN-NPs based RRAM device for transparent synaptic devices.