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用X射线光电子谱（XPS）和俄歇电子能谱（AES）研究了Ti／Al_2O_3界面形成的过程。研究表明，活性金属Ti在室温下能与衬底Al2O3（1102）形成约20nm强结合的界面区。从Al，O，Ti的光电子谱形状变化以及它们随着Ti覆盖度的增加而出现结合能位移表明，在界面处形成的反应层中，最初几个单层的Ti很容易被Al2O3表面的活性氧所氧化，从而使Ti／Al2O3界面逐步由具有更强相互作用的TiOx／Al2O3界面所代替，并形成由多相混合体［Ti-O相，（Ti，Al）2O3相以及金属Al相］所组成的界面区。就是说，Ti通过Al—O键的O2-离子转移其电子给Al3+并使它还原成金属Al，从而形成Ti－O键所致。本文用AES强度剖面分析观察到了这种被还原的Al。
The formation of Ti / Al_2O_3 interface was studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results show that the active metal Ti can form strong interface area of about 20nm with substrate Al2O3 (1102) at room temperature. The change in the shape of the photoelectrons from Al, O, Ti and their binding energy shifts with increasing Ti coverage indicate that the first few monolayers of Ti in the reactive layer formed at the interface are easily affected by the activity of the Al2O3 surface Oxygen is oxidized so that the Ti / Al 2 O 3 interface is gradually replaced by a more strongly interacting TiOx / Al 2 O 3 interface and a multi-phase mixture consisting of a multiphase mixture [Ti-O phase, (Ti, Al) 2O 3 phase and metal Al phase] The composition of the interface area. That is, Ti transfers its electrons to Al3 + through the O2- ion of the Al-O bond and reduces it to the metal Al, thereby forming the Ti-O bond. This reduction of Al was observed by AES intensity profile analysis.