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基于被应用于实际设计之中的统一的铁电器件模型，详细讨论了２Ｔ２Ｃ组态的铁电破坏性读出存储器单元的设计。在此基础上，设计和制造了分立元件的单元测试电路。通过与普通电容的对比实验，证实了铁电破坏性读出随机读取存储器与普通随机读取存储器不同的工作原理和模式。进而获得了被测ＦＲＡＭ单元的特性波形和铁电材料存储特性的有关数据。这些工作为进一步进行大规模铁电存储器的研究作了准备。
Based on the unified ferroelectric device model used in the actual design, the design of a 2T-2C configured ferroelectric destructive read memory cell is discussed in detail. On this basis, the design and manufacture of discrete components of the unit test circuit. Through the comparison experiment with the ordinary capacitor, the working principle and mode of the ferroelectric destructive read random read memory and the ordinary random read memory are confirmed. And then get the measured FRAM unit characteristic waveforms and ferroelectric materials storage characteristics of the relevant data. These efforts prepare for the further research on large-scale ferroelectric memory.