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据《信学技报》(日)2010年109-361期报道,日本富士通株式会社采用了为了降低寄生电容而使栅电极周边空洞化(Cavity)的栅长为75 nm的InP HEMT器件,成功开发了传输速度超过10 Gb/s的短脉冲发生器。InP HEMT器件的g_m为2 S/mm,f_T为390 GHz,f_(max)为490 GHz。测试结果,该发生器成功地生成了20Gb/s以上的随机性脉冲。这次开发的短脉冲发生器除应用于无线通信,还可应用于高频(超过100 GHz)检测仪器和超高分辨力雷达等各种宽带系统。
According to “Letters Science and Technology” (Japan) 2010 109-361 period report, Japan’s Fujitsu Co., Ltd. used in order to reduce the parasitic capacitance around the gate electrode cavity (Cavity) InP HEMT gate length of 75 nm, the success of Developed a short pulse generator with transmission speeds in excess of 10 Gb / s. InP HEMT devices have g_m of 2 S / mm, f_T of 390 GHz, and f_max of 490 GHz. Test results, the generator successfully generated more than 20Gb / s random pulse. The short pulse generator developed this time can be applied to various broadband systems such as high-frequency (more than 100 GHz) detection instruments and ultra-high resolution radars in addition to wireless communication.