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采用紫外光电子能谱(UPS),分析了不对称四苯基四苯乙炔基环辛四烯(COT-H)有机发光材料与金属之间的界面电子结构,研究了在金属/COT-H界面上的逸出功变化.UPS谱中位于费米能级以下5.6、7.9和10.2eV处的三个谱峰分别来自于COT-H材料中苯环的πCC、σCC和σCH轨道.位于3.8eV处的谱峰反映了八个苯环聚合后具有π轨道特性的C-C键.从UPS谱图中可以看到,COT-H材料的最高占有态(HOS:highestoccu-piedstate)位于费米能级以下1.8eV处.COT-H材料的逸出功只有3.2eV,比清洁Ru表面的逸出功小1.0eV.角分辨紫外光电子能谱(ARUPS)的结果表明,组成COT-H分子应该近似平行于衬底表面.
The interfacial electron structures of asymmetric tetraphenyltetraphenylphenylene cyclooctatetraene (COT-H) organic luminescent materials and metals were analyzed by ultraviolet photoelectron spectroscopy (UPS) . The three spectral peaks in the UPS spectra at 5.6, 7.9 and 10.2 eV below the Fermi level are derived from the πCC, σCC and σCH orbital of the benzene ring in the COT-H material, respectively. Shows the CC bonds with π orbital characteristics after the polymerization of eight benzene rings.From the UPS spectrum, it can be seen that the highest occupied state of the COT-H material (HOS: highestoccu-piedstate) is located below the Fermi level eV. The COT-H material has a work function of only 3.2 eV, which is 1.0 eV less than the work function of the clean Ru surface. The results of angle resolved UV-E (ARUPS) show that the composition of COT-H molecules should be approximately parallel to the liner Bottom surface.