论文部分内容阅读
从器件物理的角度,对杂质、掺杂方式不同,形成基区的高耐压晶体三极管I-V负阻效应随机性进行分析。结果认为,负阻摆幅的大小对小电流注入下放大性能的优劣产生直接影响,而对发射极-收集极间的真正击穿电压并无减小损失;进一步证明了在SiO_2/Si系统中,开管扩Ga形成的晶体管,具有耐压高、漏电流小的特点。
From the physical point of view of the device, we analyzed the randomness of the negative resistance effect of I-V transistors with different breakdown and doping modes. The results show that the magnitude of the negative resistance swing has a direct effect on the amplification performance under the small current injection, but there is no loss reduction on the true breakdown voltage between the emitter and the collector. It is further proved that in the SiO 2 / Si system In the open tube Ga Ga formation of the transistor, with high voltage, leakage current characteristics.