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单轴应变Si材料电子电导有效质量是理解其电子迁移率增强的关键因素之一,对其深入研究具有重要的理论意义和实用价值.本文从Schrdinger方程出发,将应力场考虑进来,建立了单轴应变Si材料导带E-k解析模型.并在此基础上,最终建立了单轴应变Si(001)任意晶向电子电导率有效质量与应力强度和应力类型的关系模型.本文的研究结果表明:1)单轴应力致电子迁移率增强的应力类型应选择张应力.2)单轴张应力情况下,仅从电子电导有效质量角度考虑,[110]/(001)晶向与[100]/(001)晶向均可.但考虑到态密度有效质量的因素,应选择[110]/(001)晶向.3)沿(001)晶面上[110]晶向施加单轴张应力时,若想进一步提高电子迁移率,应选取[100]晶向为器件沟道方向.以上结论可为应变SinMOS器件性能增强的研究及导电沟道的应力与晶向设计提供重要理论依据.
The unimodal strain-gauge Si material is one of the key factors to understand the electron mobility enhancement, and has important theoretical and practical value for further study.In this paper, the stress field is taken into account from the Schrdinger equation and established The Ek analytical model of the conduction band of uniaxial strained Si material was established, and finally the relationship model between the effective mass of the electronic conductivity and the stress intensity and the stress type of the uniaxial strained Si (001) arbitrary crystal was finally established.The results of this paper The results show that: 1) the stress type with enhanced electron mobility under uniaxial stress should choose the tensile stress.2) In the case of uniaxial tensile stress, the [110] / (001) However, considering the effective mass density, the [110] / (001) orientation should be chosen.3) The uniaxial orientation of [001] along the (001) If stress is to be further increased, the orientation of [100] should be chosen as the channel direction of the device, which provides an important theoretical basis for the study of enhanced performance of strained SinMOS devices and the design of stress and orientation of conducting channels.