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报道了对有序ＧａｘＩｎ１－ｘＰ（ｘ＝０．５２）样品的变温和变激发功率密度的ＰＬ谱的研究．在低温Ｔ＝１７Ｋ，低激发功率密度下，谱线呈双峰结构，在低激发功率密度下升高温度，低能端的发光峰（以下简称Ａ峰）发生热猝灭，并在８５Ｋ左右完全消失．高能端的发光峰（以下简称Ｂ峰）积分强度则随温度升高先增强而后发生猝灭．采用低激发功率密度激发样品，Ａ峰较Ｂ峰强．增大激发功率密度，Ｂ峰强度逐渐超过Ａ峰强度并占据主导地位．激发功率密度增加约两个数量级时，发现Ｂ峰峰值位置不随激发功率密度移动，而Ａ峰出现微小蓝移（６．２ｍｅＶ）．初步分析表明，Ａ峰与空间分离中心的复合有关，而Ｂ峰来自本征激子复合；Ｂ峰积分强度随温度升高而反常增强解释为空穴从无序区域到有序区域的转移
Reported the PL spectra of the variable temperature and variable excitation power density for ordered GaxIn1-xP (x = 0.52) samples. At low temperature T = 17K, at low excitation power density, the spectral line has a bimodal structure, and at the low excitation power density, the luminescence peak (hereinafter referred to as A peak) quenches thermally and disappears completely at about 85K . The integrated intensity of the high-energy terminal luminescence peak (hereinafter referred to as the “B peak”) increases first and then quenches with increasing temperature. The sample is excited with a low excitation power density and the A peak is stronger than the B peak. Increasing the excitation power density, B peak intensity gradually exceeds the A peak intensity and occupy the dominant position. When the excitation power density increased by about two orders of magnitude, it was found that the peak position of B peak did not move with the excitation power density, but the peak of A peak showed a slight blue shift (6.2 meV). The preliminary analysis shows that the peak A is related to the compound of the spatial separation center and the peak B comes from the intrinsic exciton complex. The integral intensities of the B peaks increase abnormally as the temperature increases, which is interpreted as the transfer of holes from the disorder region to the ordered region