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提出利用双光反馈(DOF)主半导体激光器(SL)双光注入(DPI)到从SL的方案来隐藏混沌激光光强和相位的延时特征峰,利用自相关函数和互信息函数对不同方案下延时特征峰的抑制情况进行了对比分析。研究结果表明,对同种类型的激光器,在相同参数区间内,DOF-DPI方案与其他方案相比,具有更好的抑制效果;另外,带混沌光注入的方案对相位延时特性的抑制要比对光强延时特性的抑制效果好;在延时特征峰抑制到相同水平的前提下,DOF-DPI方案比其他方案具有更宽的参数区间。
This paper proposes a double-light-in-dimming (DOI) semiconductor laser (SL) double-light injection (DPI) scheme from SL to hide the delay characteristic peaks of the chaotic laser intensity and phase. Using the autocorrelation function and the mutual information function, Under the delay characteristics of peak suppression were compared. The results show that, for the same type of laser, the DOF-DPI scheme has a better suppression effect than the other schemes in the same parameter range. In addition, the scheme of suppressing the phase delay with the scheme of chaotic light injection Compared with the other two schemes, the DOF-DPI scheme has a wider range of parameters than the other schemes with the delay characteristic peaks suppressed to the same level.