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绪言: 众所周知,在晶体上施加外力时,其电导率变化的性质为压电电阻效应。在实用方面,其有用的特性大体上都可以从金钢石或者闪锌矿结构的半导体中看到。这种效应依赖于外力,使其传导频带或价电子波段的能量状态发生变化,其结果可以作为载流子的分布和迁移率的变化来给予解释。另外,对显像论而言,在应力的小范围內,电阻系数变化率△q/q与应力可以用比例关系表达,其比例常数π称为压电电阻系数。
INTRODUCTION: It is well known that the nature of the change in conductivity when an external force is applied on a crystal is the piezoresistance effect. In practical terms, its useful properties are generally seen in semiconductors of diamond or sphalerite structures. This effect relies on external forces to change the energy state of its conduction band or valence band, and the result can be explained as the change of carrier distribution and mobility. In addition, in terms of the theory of imaging, within a small range of stress, the rate of change of the resistivity Δq / q and the stress can be expressed in a proportional relationship, and the rate constant π is called the piezoresistive coefficient.