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利用直流(DC)磁控溅射方法制备氢化非晶硅(a-Si∶H)薄膜。研究了氢气流量、溅射源功率对膜的沉积速率、氢含量(CH)以及光学性能的影响。通过傅里叶变换红外(FTIR)吸收光谱计算氢含量,其最大原子数分数为11%。用椭偏仪测量了膜的折射率n和消光系数k,发现a-Si∶H薄膜的k值和n值都随CH的增加而减小。将优化的实验结果用于半导体激光器腔面高反镜的镀制,a-Si∶H薄膜在808 nm波长处的n和k分别为3.2和8×10-3,获得了良好的激光输出特性。
Hydrogenated amorphous silicon (a-Si: H) films were prepared by DC magnetron sputtering. The effects of hydrogen flow rate, sputter source power on the film deposition rate, hydrogen content (CH) and optical properties were investigated. The hydrogen content was calculated by Fourier transform infrared (FTIR) absorption spectroscopy with a maximum atomic fraction of 11%. The refractive index n and extinction coefficient k of the films were measured by ellipsometry. It was found that the k and n values of a-Si: H films decreased with the increase of CH. The optimized experimental results are used for the plating of high reflectivity mirrors of semiconductor lasers. The a-Si: H films have n and k at 808 nm of 3.2 and 8 × 10-3, respectively, and have good laser output characteristics .