日本日立制作所在日立剑桥研究所的协助下已成功地制成用一个电子能记录1位信息的单一电子存储器’并能在室温下工作。在硅衬底上制作栅电极，并在其上面制成硅氧化膜，然后把党100nm、厚4nm的多晶硅细线制成十字形的结构。细线由直径10urn的许多硅晶粒构成。在交叉的极微小的 With the help of the Hitachi Institute of Cambridge, Hitachi has succeeded in making a single electronic memory capable of recording 1 bit of information with one electron and is capable of operating at room temperature. A gate electrode was formed on a silicon substrate and a silicon oxide film was formed thereon, and then a 100 nm thick polycrystalline silicon thin wire having a thickness of 4 nm was formed into a cross-shaped structure. The thin wire consists of many silicon grains with a diameter of 10urn. Very tiny in the cross