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作者对AlGaAs/GaAs结构调制掺杂材料及多量子阱材料 ,分别使用电子束或质子束辐照 电子束辐照能量为 0 .4～ 1.8MeV ,辐照注量为 1× 10 13cm- 2 ～ 1× 10 16 cm- 2 ,质子束辐照能量为 2 0～ 130keV ,辐照注量为 1× 10 11cm- 2 ～ 1× 10 14 cm- 2 .辐照前后的样品均经过深能级瞬态谱 (DLTS)的测试 .测试结果表明 ,电子束辐照引入了新缺陷 ,其能级位置为E3=Ec-0 .6 5eV ,而质子辐照引入的深缺陷能级为E1=Ec- 0 .2 2eV ,电子和质子束辐照同时对与掺Si有关的原生缺陷DX中心E2 =Ec- 0 .4 0eV也有影响 ,即浓度发生改变 ,峰形亦不对称 ,说明其中包含有其他邻近缺陷的贡献 .DLTS测试给出了这些深中心的浓度及俘获截面等参数 .
The author of the AlGaAs / GaAs structure-modulated dopant material and multiple quantum well material, respectively, using electron beam or proton beam irradiation electron beam irradiation energy of 0. 4 ~ 1.8MeV, irradiation fluence of 1 × 1013cm-2 ~ 1 × 10 16 cm-2, irradiation energy of proton beam is 20 ~ 130 keV, irradiation dose is 1 × 10 11 cm -2 ~ 1 × 10 14 cm -2.The samples before and after irradiation all pass deep-level instant (DLTS) .Test results show that the electron beam irradiation introduces a new defect whose energy level position is E3 = Ec-0. 65eV, and the deep defect level introduced by proton irradiation is E1 = Ec- 0 .2 2eV, electron and proton beam radiation also have the same effect on the DX center E2 = Ec-0. 4eeV that is related to Si-doping primary defects. That is, the concentration changes and the peak shape is also asymmetric, indicating that there are other neighboring Defect Contributions The DLTS test gives these deep-center concentration and capture cross-section parameters.