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以磁控溅射方法于 p- Si上淀积富硅二氧化硅 ,形成富硅二氧化硅 /p- Si结构 ,用金刚刀在其正面刻划出方形网格后在 N2 气氛中退火 ,其光致发光 (PL)谱与未刻划的经同样条件退火的对比样品的 PL 谱有很大不同 .未刻划样品的 PL 谱只有一个峰 ,位于 840 nm (1.48e V) ,而刻划样品的 PL 谱是双峰结构 ,峰位分别位于 6 30 nm(1.97e V)和 840 nm.80 0℃退火的刻划富硅二氧化硅 /p- Si样品在背面蒸铝制成欧姆接触和正面蒸上半透明金电极后在正向偏压 10 V下的电致发光 (EL)强度约为同样制备的未经刻划样品在同样测试条件下的 EL 强度的 6倍 .EL 谱形状也有明显不同 ,表现在 :未经刻划样品的 EL 谱可以分解为两个高斯峰 ,峰位分别位于 1.83e V和2 .2 3e V;而在刻划样品 EL 谱中 1.83e V发光峰大幅度增强 ,还产生了一个新的能量为 3.0 e V的发光峰 .认为刻划造成的高密度缺陷区为氧化硅提供了新的发光中心并对其中某些杂质起了吸除作用 ,导致 PL 和 EL 光谱改变 .
A silicon-rich silicon dioxide is deposited on the p-Si by magnetron sputtering to form a silicon-rich silicon dioxide / p-Si structure, which is annealed in a N2 atmosphere after a square grid is scored on the front surface thereof with a diamond knife, The photoluminescence (PL) spectrum is very different from the PL spectrum of the unscaled control annealed under the same conditions. The un-scored PL spectrum has only one peak at 840 nm (1.48eV) The PL spectra of the sample were bimodal with peak positions located at 6 30 nm (1.97eV) and 840 nm, respectively. The Si-rich silicon dioxide / p-Si samples annealed at 0 ° C were evaporated on the back to make ohmic The electroluminescence (EL) intensity at forward bias of 10 V after contact and front-side evaporation of the semitransparent gold electrode was about 6 times the EL intensity of the similarly prepared unscribed sample under the same test conditions. The shapes of the samples are also obviously different. The results show that the EL spectra of unsplit samples can be decomposed into two Gaussian peaks with peak positions of 1.83eV and 2.3eV, respectively. In the EL spectrum of the scribed sample, 1.83eV luminescence The sharp increase of the peak also produced a new luminescence peak with an energy of 3.0 e V. It is believed that the high density defect region caused by scoring provides for the oxidation of silicon oxide The new light emission center and some impurities from the gettering effect, resulting in PL and EL spectra change.