采用平面选择注入隔离工艺制作 MESFET及旁栅电极 ,通过改变半导体特性测试仪的延迟时间参数 ,深入研究了不同沟道电流的数据采集时间对旁栅效应迟滞现象的影响 .发现当延迟时间超过 2 s时 ,迟滞现象基本消失 ,旁栅效应达到稳态 ,而且准静态地改变旁栅电压 ,沟道电流的变化会达到一稳定值 ,与过程无关 ,于是可以避免迟滞现象 .并从理论上解释了所发现的现象 The effect of data acquisition time with different channel currents on the hysteresis of the parallel-gate effect is investigated by changing the delay time parameters of the semiconductor tester by using the plane-selective implant isolation process. The results show that when the delay time exceeds 2 s, the phenomenon of hysteresis basically disappears and the side-gate effect reaches the steady state, and quasi-static change of the side-gate voltage, the change of the channel current will reach a stable value, which has nothing to do with the process, so that hysteresis can be avoided. The phenomenon found