本文叙述了一个16K 单元动态随机存储器(RAM),所有输入都与 TTL 相容,使用标准的16引线封装。存储单元为单管,单元面积为455μm~2。器件采用常规设计规则的 n-沟道两层多晶硅栅工艺。芯片尺寸为145×234mil~2。每64个存储单元用一个低功耗的读出放大器。采用一种特殊的再生方式,即256个读出放大器同时工作,因此,整个存储器可在64个地址周期内完成再生。 This article describes a 16K unit dynamic random access memory (RAM), all inputs are TTL compatible, using a standard 16-lead package. The storage unit is a single tube, the unit area is 455μm ~ 2. The device uses n-channel, two-layer polysilicon gate technology with conventional design rules. The chip size is 145 × 234mil ~ 2. A low-power sense amplifier is used for every 64 cells. Using a special kind of regeneration, that is, 256 sense amplifiers operate simultaneously, therefore, the entire memory can be regenerated within 64 address cycles.