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一、引言随着我国移动通讯的迅速发展,将需要建立许多基地站和中心站,目的在于组网以便进行有、无线交换、长途通讯等,这样,就必须设置大功率发射机。随着半导体工业的发展,采用晶体管作为末级输出,在我国也已有可能。本文主要讨论的是 VHF 晶体管大功率放大器的设计技术。为了便于分析,我们用一个工作电压为12.5V,175MHz,80W 调频发射机的功放作为讨论课题。并采用由美国莫托罗拉公司制造的2N6255,2N6590,2N6083和2N6084的射频功率晶体管,着重讨论2N6084
I. INTRODUCTION With the rapid development of China’s mobile communications, many base stations and central stations will need to be set up. The purpose is to set up a network in order to carry out wireless exchanges and long-distance communications. In this way, high-power transmitters must be set up. With the development of the semiconductor industry, the use of transistors as the final output, in our country has also been possible. This article focuses on the VHF transistor amplifier design technology. In order to facilitate the analysis, we use a working voltage of 12.5V, 175MHz, 80W FM transmitter amplifier as a discussion topic. And the use of 2N6255, 2N6590, 2N6083 and 2N6084 by the United States Motorola company’s RF power transistor, focusing on 2N6084