讨论了稀土掺杂的硫化锌薄膜电致发光器件中被激发的发光中心的场致离化机理；根据弗朗兹，凯尔迪什效应估计了发光中心较高激发能级的深度。同时还考虑了碰撞和温度对发光中心离化的影响，计算并比较了场致离化、碰撞离化及热辅助离化的几率。结果发现，在室温下场致离化是导致发光中心微发能级电子离化的主要因素 The mechanism of field ionization of excited luminescent centers in rare earth doped zinc sulfide thin film electroluminescent devices is discussed. The depth of higher excitation level of luminescent centers is estimated according to the Franz-Keldys effect. At the same time, the impact of collisions and temperature on the ionization of luminescent centers was also considered and the probability of field induced ionization, collision ionization and thermal assisted ionization were calculated and compared. It was found that the field ionization at room temperature is the main factor leading to the ionization of the microscopic level of the luminescent center