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硅的局部氧化(LOCOS)对于半导体器件制造技术是一个有价值的工艺,以便在硅衬底中获得部分地或全部的较厚的氧化层图案。依其工艺步骤的不同,可以得到三种局部氧化结构。当使用二氧化硅—氮化硅(SiO_2—Si_3N_4.)的夹层结构作为掩蔽时,氧化层图案的边缘不如单纯使用~-Si_3N_4作为掩蔽的情况来得陡峭。阐述了使用氧化物—氮化物夹层结构的新的工艺特点的如在LOCOS—Ⅱ中所指出的,这种方法能利用控制的钻蚀制作埋入氧化层图案下的界限分明的扩散区。
Local oxidation of silicon (LOCOS) is a valuable process for semiconductor device fabrication techniques to obtain a partial or complete thicker oxide pattern in a silicon substrate. According to the different process steps, we can get three kinds of local oxidation structure. When using a sandwich structure of silicon dioxide-silicon nitride (SiO_2-Si_3N_4.) As a mask, the edge of the oxide layer pattern is steeper than the case of using only -Si_3N_4 as a mask. Describing the new process features using oxide-nitride interposer structures, as noted in LOCOS-II, this method enables the controlled drilling to produce well-defined diffusion regions buried under the oxide layer pattern.