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通过采用层叠结构、增加SiO2介质腔和铝反射镜、背面蒸镀SiO抗反射层等措施，使P＋－GexSi1－x／p—Si异质结内光发射红外探测器在77K下的性能提高到在不加偏置电压的条件下响应范围2～8μm，D（5．5，1000，1）＝1．1×1010cmHz1／2／W，量子效率可达4％。其Dp已达到实用的PtSi红外探测器的量级。另外，在器件的结构设计中，我们采用了一种改进的电极结构，以提高器件的性能和可靠性。
The P + -GexSi1-x / p-Si Heterojunction Internal Light Emitting Infrared Detector has been improved to 77K at 77K by using a laminated structure, an increase of SiO2 dielectric cavity, an aluminum mirror, and an SiO antireflection layer on the back surface Without bias voltage response range 2 ~ 8μm, D (5.5,1000,1) = 1.1 × 1010cmHz1 / 2 / W, quantum efficiency up to 4%. Its Dp has reached the practical level of PtSi infrared detectors. In addition, in the structural design of the device, we have adopted an improved electrode structure to improve the performance and reliability of the device.