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采用配位多面体生长习性法则研究了极性晶体ZnO ,ZnS和SiO2 的理论生长习性 .发现其正负极轴方向的生长速度不同 .ZnO晶体的理论习性为六方柱状 ,各晶面的生长速度为 :V〈0 0 0 1〉>V〈0 111〉>V〈0 110〉>V〈0 111〉>V〈0 0 0 1〉;ZnS晶体的理论习性为四面体 ,各晶面的生长速度为 :V〈111〉>V〈0 0 1〉=V〈10 0〉=V〈0 10〉>V〈111〉;SiO2 晶体的正负极轴方向的生长速度为V〈112 0〉>V〈112 0〉.此结果与在水热条件下观察到的生长习性符合得相当好 .而PBC理论不能解释正负极轴方向生长速度的差异 .
The theoretical growth habit of polar crystals ZnO, ZnS and SiO2 has been studied by using the law of coordination polyhedron growth and found that the growth rate of ZnO is different in the positive and negative axis.The theoretical habit of ZnO is hexagonal columnar, the growth rate of each crystal plane is : V <0 0 0 1 >> V <0 111 >> V <0 110 >> V <0 111 >> V <0 0 0 1>; The theoretical habit of ZnS crystals is tetrahedron, the growth rate of each crystal plane Is V <111 >> V <0 0 1> = V <10 0> = V <0 10 >> V <111>; the growth rate of the SiO2 crystal in the positive and negative electrode axis directions is V <112 0 >> V <112 0> This result is in good agreement with the observed growth habit under hydrothermal conditions, whereas the PBC theory does not explain the differences in the growth rates between the positive and negative polar axes.