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旁栅偏压条件下,GaAsMESFET沟道电流的迟滞行为与衬底深能级EL2和沟道-衬底结的特性密切相关.实验研究发现,外加旁栅偏压条件下,沟道电流的迟滞行为发生的根本原因是沟道-衬底结耗尽区展宽和收缩对深能级EL2的电子俘获和电子发射的响应比较慢.当旁栅偏压稳态变化时,沟道电流的迟滞现象将消失,即存在一个迟滞行为消失的“准静态”.这一发现和结论对于MMIC的设计将具有比较重要的指导意义和参考价值.
Under the bias condition, the hysteretic behavior of GaAsMESFET channel current is closely related to the EL2 and channel-substrate junction characteristics of the substrate.Experimental results show that the hysteresis The fundamental reason for this behavior is that the channel-substrate junction depletion region broadening and shrinking responds slowly to the electron capture and electron emission of the deep-level EL2. When the bias of the local-gate bias changes steadily, the hysteresis of the channel current Will disappear, that is, there is a “quasi-static” disappearing hysteresis.The discovery and conclusion will have more important guiding significance and reference value for MMIC design.