论文部分内容阅读
作者在双壁石英管氧化炉中生成了5～6nm厚的超薄SiO_2膜,并在850～1100℃的变化温度下进行N_2和Ar退火,对于850℃下生成的氧化膜,所得到的击穿场分布很紧凑,集中在11MV/cm以上,氧化后在1000℃下退火所得的氧化膜与在较低温度下退火的氧化膜相比,击穿场的分布与击穿电荷密度有一致的改善,并且在高场电流应力下,采用了1000℃下氧化后退火(POA)工艺的氧化物出现了正电压平带V_(fb)的移动,而采用温度T<1000℃的POA工艺的氧化物则表现了负的V_(fb)移动。这些结果表明:5～6nm氧化膜的高温POA工艺对击穿强度和某些缺陷减少的影响是造成正电荷俘获的原因。
The authors produced an ultrathin SiO_2 film with a thickness of 5 ~ 6nm in double-walled quartz tube oxidation furnace and annealed N_2 and Ar at a temperature of 850 ~ 1100 ℃. For the oxide film formed at 850 ℃, The distribution of the breakdown field is very close to 11MV / cm. The oxide films annealed at 1000 ℃ after oxidation have the same breakdown voltage distribution as the oxide films annealed at lower temperatures , And under the high field current stress, the oxide with the post-oxidation oxidation anneal (POA) process at 1000 ℃ exhibited a positive voltage band V_ (fb), whereas the oxidation with the POA process at temperature T <1000 ℃ The object then shows a negative V_ (fb) shift. These results show that the effect of the high temperature POA process of 5 ~ 6nm oxide film on the breakdown strength and the reduction of certain defects is the reason for the positive charge trapping.