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最近,松下电器公司光半导体研究所以有机金属气相外延(MOVPE)法开发Ⅱ-Ⅲ族化合物半导体的超晶格制作技术,以此在Ⅲ-Ⅴ族化合物半导体GaAs上形成100层Ⅱ-Ⅵ族的ZnSe/ZnS超晶格层。用这一超晶格层制出负载型光波导,以He-Ne激光入射,第一次成功地做了超晶格三维可见光波导实验。
Recently, the Matsushita Electric Industrial Institute of Optoelectronics developed a superlattice fabrication technique for group II-III compound semiconductors by the MOVPE method to form 100-layer II-Ⅵ groups of III-V Group compound semiconductor GaAs ZnSe / ZnS superlattice layer. Using this superlattice layer to fabricate a load-type optical waveguide, a He-Ne laser was used to make the first successful superlattice 3D visible optical waveguide experiment.