The influences of the main structure and physical parameters of the dual-gate GeOI MOSFET on the device performance are investigated by using a TCAD 2D device simulator.A reasonable value range of germanium (Ge) channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect(SCE) and drain-induced barrier lowering(DIBL) effect of the GeOI MOSFET.When the channel thickness and its doping concentration are 10–18 nm and (5–9)×10~17 cm~(-3),and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8–1 nm and 15–30, respectively,excellent device performances of the small-scaled GeOI MOSFET can be achieved: on-state current of larger than 1475 A/ m, off-state current of smaller than 0.1 A/ m, SCE–induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV. The influences of the main structure and physical parameters of the dual-gate GeOI MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium (Ge) channel thickness, doping concentration, gate oxide thickness and permittivity is determined by the current of the on-state current, off-state current, short channel effect (SCE) and drain-induced barrier lowering (DIBL) effect of the GeOI MOSFET.When the channel thickness and its doping concentration are 10-18 nm and (5-9) × 10 ~ 17 cm -3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can is achieved: on-state current of larger than 1475 A / m, off-state current of smaller than 0.1 A / m, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV.