FD-SOI(全耗尽绝缘硅)是指一种平面晶体管结构。这种平面架构是通过在绝缘硅片晶圆超薄的绝缘氧化埋层(BOX)上再生长一层超薄的单晶硅层来实现的。由于采用超薄硅层,所以不需要沟道掺杂,使晶体管得以全耗尽。此外,薄氧化埋层使得基底偏压功能可以满足功耗/性能以及成本要求。相比传统的硅CMOS(bulk FD-SOI (Fully depleted silicon) refers to a planar transistor structure. This planar architecture is achieved by growing a thin layer of ultra-thin monocrystalline silicon on an ultra-thin insulating oxide buried layer (BOX) of an insulating silicon wafer. Due to the ultra-thin silicon layer, there is no need for channel doping to allow the transistor to be fully depleted. In addition, the thin oxide buried layer enables the substrate bias function to meet the power consumption / performance and cost requirements. Compared to the traditional silicon CMOS (bulk