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利用Ｘ射线衍射和扫描电子显微镜对不同衬底温度下电子束蒸发的ＣａＳ∶ＴｂＦ３电致发光薄膜的结晶性和表面形貌进行了研究．通过对薄膜的透射率和漫反射率的测量研究了薄膜的致密性．Ｘ射线衍射表明衬底温度在２２０到５８０℃范围之间，电子束蒸发的ＣａＳ∶ＴｂＦ３电致发光薄膜为多晶立方晶相．随着衬底温度的提高，ＣａＳ∶ＴｂＦ３薄膜的表面形貌发生显著的变化，薄膜的致密性增加，从而增加了电致发光亮度．
X-ray diffraction and scanning electron microscopy were used to study the crystallinity and surface morphology of CaS: TbF3 electroluminescent thin films deposited by electron beam at different substrate temperatures. The compactness of the film was investigated by measuring the transmittance and diffuse reflectance of the film. X-ray diffraction showed that the substrate temperature was in the range of 220 to 580 ° C. The electron beam evaporated CaS: TbF3 electroluminescent film was a polycrystalline cubic phase. With the increase of the substrate temperature, the surface morphology of CaS: TbF3 thin films changes significantly, the compactness of the films increases, and the electroluminescence brightness is increased.