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通过对相同硅片不同时间低温退火和相同的高温退火后氧沉淀诱生缺陷密度的测量,判明氧沉淀核密度随低温退火时间的加长呈线性增加。实验中得到的成核速率与按均匀成核经典理论计算之结果比较一致。因此认为,对所采用的硅单晶在具体工艺条件下,氧沉淀是以均匀成核为主。根据不同温度等时低温退火处理后9μm吸收峰的比较,发现,间隙氧浓度随低温退火温度的升高而递增。这只能用均匀成核理论来解释,因而这一实验结果可作为均匀成核的另一依据。
By measuring the densification density induced by low temperature annealing and the same high temperature annealing for the same silicon wafer at different times, it was found that the oxygen precipitation nucleus density increased linearly with the increase of low temperature annealing time. The nucleation rate obtained in the experiment is consistent with that calculated by classical theory of homogeneous nucleation. Therefore, the use of silicon single crystal in the specific process conditions, oxygen precipitation is based on uniform nucleation. According to the comparison of the 9μm absorption peaks after isothermal annealing at different temperatures, it was found that the interstitial oxygen concentration increased with the increase of the low temperature annealing temperature. This can only be explained by the theory of homogeneous nucleation, so this experimental result can be used as another basis for uniform nucleation.