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为了研究连续激光晶化的非晶硅薄膜的结构特性,采用等离子体增强化学气相沉积技术在玻璃衬底上沉积了非晶硅薄膜,用波长为532 nm的连续激光对非晶硅薄膜进行晶化,并采用喇曼光谱仪、傅里叶红外吸收光谱仪和原子力显微镜对激光晶化前后薄膜的结构和形貌进行表征。结果表明,固定激光照射时间为45 s、激光功率密度为1.914×105 W/cm2时,非晶硅薄膜开始晶化。当激光功率密度达到4.016×105 W/cm2时,薄膜晶化效果最佳。随着激光功率密度进一步增至4.872×105 W/cm2时,薄膜晶化效果变差。当固定激光功率密度保持4.016×105 W/cm2,激光照射时间为10 s时,非晶硅薄膜开始晶化,激光照射时间为45 s时晶化效果最佳。上述研究结果对采用连续激光晶化法制备多晶硅薄膜具有一定的指导意义。
In order to study the structural characteristics of continuous laser-crystallized amorphous silicon thin films, amorphous silicon thin films were deposited on glass substrates by plasma-enhanced chemical vapor deposition technique. The amorphous silicon thin films were crystallized by continuous laser with a wavelength of 532 nm The structures and morphologies of the films before and after laser crystallization were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy and atomic force microscopy. The results show that the amorphous silicon film begins to crystallize when the laser irradiation time is 45 s and the laser power density is 1.914 × 105 W / cm2. When the laser power density reaches 4.016 × 105 W / cm2, the film crystallization is the best. As the laser power density further increases to 4.872 × 105 W / cm2, the crystallization of the thin film becomes poor. When the fixed laser power density is kept at 4.016 × 105 W / cm2 and laser irradiation time is 10 s, the amorphous silicon film begins to crystallize. When the laser irradiation time is 45 s, the crystallization effect is best. The results of the above studies have certain guiding significance for the preparation of polycrystalline silicon films by continuous laser crystallization.