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研究了MOVPE生长的与GaAs晶格匹配的 (AlxGa1-x) 0 .51In0 .4 9P(x =0 .2 9)合金的PL谱的温度依赖关系 ,在变温约为 17～ 2 30K范围内 ,谱线半宽从 2 4meV变到 4 0～ 6 0meV ,强度减小了大约两个数量级。对PL谱积分强度随温度变化的拟合表明 ,在低温区与高温区存在两个不同的激活能。温度小于 90K ,激活能为 4～ 5meV ,温度大于 90K ,激活能为 2 5～ 55meV。认为低温区行为由带边起伏引起的载流子热离化伴随的无辐射跃迁所控制 ,而高温区取决于子晶格的有序度。
The temperature dependence of the PL spectrum of (AlxGa1-x) 0.51In0.49P (x = 0.29) alloy grown by MOVPE and lattice matched to that of GaAs was studied. The spectral half-width changes from 24meV to 40 ~ 60meV, and the intensity is reduced by about two orders of magnitude. The fitting of PL spectrum integral intensity with temperature shows that there are two different activation energies in the low temperature region and the high temperature region. The temperature is less than 90K, the activation energy is 4 ~ 5meV, the temperature is greater than 90K, the activation energy is 25 ~ 55meV. It is considered that the behavior in the low temperature region is controlled by the nonradiative transition accompanying the thermal ionization of carriers due to the edge fluctuation, and the high temperature region depends on the order degree of the sublattice.