集成电路工业目前多使用如氮化钛、氮化钽等氮化物作为防止铜扩散的阻挡层。然而 ,在氟离子存在的情况下 ,铜、银和钯等金属离子会与氮化物发生自发性的置换反应 ,并造成金属的沉积。所沉积出的钯金属尽管被认为是污染物 ,但其可作为后续电镀铜工艺的晶种层。此外 ,利用化学镀技术可成功在活化后的二氧化硅上沉积出镍钼磷薄膜 ,该材料具有作为铜内联阻挡层及晶种层的潜力。通过原子力显微镜 (AFM)、电子显微镜 (SEM)、Auger电子显微镜 (AES)、X光绕射 (XRD)、四点探针 (4 pointprobe)及表面轮廓仪 (Alpha step) ,研究了镍钼磷薄膜的微观结构、沉积速率、组成及电阻率等。另外 ,通过直接镀铜及二次离子质谱仪的测量 ,初步确定了镍钼磷可作为阻挡层及晶种层的特性 Currently, the integrated circuit industry uses more nitrides, such as titanium nitride and tantalum nitride, as a barrier against copper diffusion. However, in the presence of fluoride ions, metal ions such as copper, silver and palladium spontaneously displace with the nitride and cause metal deposition. The deposited palladium metal, although regarded as a contaminant, can act as a seed layer for the subsequent electroless copper process. In addition, nickel-molybdenum phosphorous films can be successfully deposited on the activated silicon dioxide using electroless plating technology, which has the potential of being a copper in-line blocking layer and a seed layer. The atomic absorption spectroscopy of nickel molybdenum phosphorus (NiMo) was studied by atomic force microscopy (AFM), electron microscopy (SEM), Auger electron microscopy (AES), X-ray diffraction (XRD), four pointprobe and Alpha step. Film microstructure, deposition rate, composition and resistivity. In addition, by direct copper plating and secondary ion mass spectrometry measurements, nickel molybdate can be initially identified as a barrier layer and seed layer characteristics