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针对传统欠压锁定(UVLO)电路结构复杂和响应速度慢的问题,设计了一种高精度的快速响应欠压锁定电路。该电路整体均由CMOS管组成,结构简单且易于实现。采用电流模控制技术,随电源电压呈二次方曲线变化的自偏置电流控制阈值电压的产生,有效提高了电路的响应速度。该欠压锁定电路基于0.18μm BCD工艺设计,并利用HSPICE进行仿真验证,当电源电压在0 5 V区间变化时,输出电压翻转的上阈值门限为3.91 V,相应下阈值门限为3.82 V,迟滞量为90 m V,温度在-40~125℃范围变化时,阈值门限电压容差仅为0.9μV,可实现输出电压的高精度转换,电路面积仅为15μm×48μm。
Aiming at the problem of complex structure and low response speed of UVLO circuit, a fast response under-voltage lockout circuit with high precision is designed. The circuit consists of CMOS tubes as a whole, the structure is simple and easy to implement. The use of current mode control technology, with the power supply voltage quadratic curve of self-bias current control threshold voltage generation, effectively improve the circuit’s response speed. The undervoltage lockout circuit is based on a 0.18μm BCD process design and simulated by HSPICE. When the supply voltage varies from 0 V to 5 V, the upper threshold threshold of the output voltage toggling is 3.91 V, the corresponding lower threshold threshold is 3.82 V, and the hysteresis When the temperature is in the range of -40 to 125 ° C, the threshold threshold voltage tolerance is only 0.9μV, which allows high-precision output voltage conversion with a circuit area of only 15μm × 48μm.