论文部分内容阅读
研究了[001]织构和非织构金刚石膜的暗电流-电压特性、电流-温度特性以及在稳态X射线辐照下的响应。结果表明[001]织构的金刚石膜相对非织构多晶金刚石膜具有大的暗电流和X射线响应,主要是由于非织构金刚石膜含有大量的晶粒间界,导致对载流子的传输产生强烈散射。在高于500K的温度区域内,随着温度的上升[001]织构和非织构的金刚石膜的电流都将以指数式上升,这与Si占据金刚石格点产生1.68eV的激活能有关。
The dark current-voltage characteristics, current-temperature characteristics and the response of [001] textured and non-textured diamond films under steady state X-ray irradiation were investigated. The results show that the [001] textured diamond film has a large dark current and X-ray response to the non-woven polycrystalline diamond film, mainly due to the large number of grain boundaries in the non-textured diamond film, Transmission produces strong scattering. At temperatures above 500K, the current of textured and un-textured diamond films increases exponentially with increasing temperature [001], which is related to the activation energy of 1.68eV for Si to occupy the diamond lattice.