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用１１２ＭｅＶＡｒ离子以５０Ｋ的低温辐照了＜１１１＞取向的单晶Ｓｉ，后在室温下来用Ｘ射线光电子谱（ＸＰＳ）、电子顺磁共振（ＥＰＲ）和红外光吸收（ＩＲ）技术对样品进行了分析。ＸＰＳ分析结果表明。表面处Ｓｉ以单元素和ＳｉＯ２两种形式共存，辐照对这两种形式Ｓｉ的２ｐ轨道电子的结合能影响较小，ＥＰＲ测量结果显示，Ｓｉ中的损伤产生明显地依赖于辐照剂量，当剂量为１．０ｘ１０１４—１．８ｘ１０１４ｃｍ－２时。可以观测到了中性四空位（Ｓｉ－Ｐ３心）、孤立的非晶区域等缺陷；随辐照剂量增加，孤立的非晶区域转变为连续的非晶层，非晶共振线表现为对称的洛仑兹型线。其ｇ因子约为２．００５８。ＩＲ在辐照的Ｓｉ中揭示了双空位的形成，双空位主要分布在电子能损起主导作用的辐照区域，其浓度随辐照剂量的增加而增加，并在高剂量时趋向饱和。最后定性地讨论了结果。
The <111> oriented single crystal Si was irradiated with 112 MeVAr ions at a low temperature of 50K and the samples were subjected to X-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance (EPR) and infrared light absorption (IR) Analysis. XPS analysis results show. The surface of Si coexist in the form of single element and SiO2, and the irradiation has little effect on the binding energy of the 2p orbital electrons of the two forms of Si. The EPR measurement results show that the damage in Si is obviously dependent on the irradiation dose, When the dose is 1.0x1014-1.8x1014cm-2. The defects such as the neutral quaternary vacancy (Si-P3) and the isolated amorphous region can be observed. With the increase of irradiation dose, the isolated amorphous region turns into a continuous amorphous layer, and the amorphous resonance line shows symmetrical Losses Lunz line type. The g factor is about 2.0058. The formation of double vacancies was revealed by IR in irradiated Si. The double vacancies were mainly distributed in the irradiated region where electrons could play a dominant role. The concentration of IR increased with the increase of irradiation dose and tended to be saturated at high dose. The final qualitative discussion of the results.