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本文研究了MZOS结构的电学性质及热处理效应，并进行了X线衍射分析和电子能谱分析．发现适当温度下的氧退火处理对改善ZnO膜的C轴对称性、降低Si表面有效电荷密度有显著效果．
In this paper, the electrical properties and heat treatment effects of MZOS structure have been investigated. The X-ray diffraction and electron spectroscopy analysis have been carried out. It is found that oxygen annealing at a proper temperature has a significant effect on improving the C-axis symmetry of the ZnO film and reducing the effective charge density on the Si surface.