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说明硅的局部氧化技术可用于制造许多新的或改进了的器件结构。在双极集成电路中可以用氧化壁隔离来代替通常的隔离扩散,这有可能导致高的包装密度。另外,在双极晶体管的制备中这个方法能自对准,这使工艺过程简单了。在MOS集成电路中可以制作自对准的栅氧化区以及自对准的扩散沟道截断环。这样用比较简单的工艺可以实现P型沟道以及N型沟道MOS电路。通过氧化物-氮化物夹层结构的控制钻蚀(LOCOS-Ⅱ工艺)可更好的制作沟道截断环。
This shows that the local oxidation of silicon can be used to fabricate many new or improved device structures. In bipolar integrated circuits oxide wall isolation can be used instead of the usual isolation diffusion, which can lead to high packing densities. In addition, this method is self-aligning in the fabrication of bipolar transistors, which makes the process simple. Self-aligned gate oxide regions and self-aligned diffusion channel stop rings can be fabricated in MOS integrated circuits. In this way, the P-type channel and the N-type channel MOS circuit can be realized by a relatively simple process. Channel truncation loops can be made better by controlled drilling of the oxide-nitride sandwich structure (LOCOS-II process).