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研究了无序ＧａＩｎＰ样品的温度依赖关系．在低温ＰＬ谱中，谱线呈单峰结构．随着温度从１５Ｋ升高到２５０Ｋ，谱线半宽从１６ｍｅＶ增大到３１ｍｅＶ，并且发生红移（５２ｍｅＶ），同时强度减小了两个数量级．对实验结果的拟合表明，在两个温度区存在着两个不同的激活能．温度小于１００Ｋ，激活能为４ｍｅＶ；温度大于１００Ｋ，激活能变为３５ｍｅＶ．我们认为低温温度行为由带边载流子的热离化伴随的无辐射跃迁所控制，而高温区的特征激活能和跃迁几率取决于子晶格的无序度
The temperature dependency of disordered GaInP samples was investigated. In low-temperature PL spectra, the spectral line has a single peak structure. As the temperature was raised from 15K to 250K, the half-width of the spectrum increased from 16 meV to 31 meV and red-shifted (52 meV), while reducing the intensity by two orders of magnitude. Fitting the experimental results shows that there are two different activation energies in the two temperature zones. Temperature is less than 100K, activation energy is 4meV; temperature is greater than 100K, activation energy becomes 35meV. We think that the low-temperature temperature behavior is controlled by the nonradiative transition accompanied by the thermal ionization of edge-carriers, while the characteristic activation energy and the transition probability of the high-temperature region depend on the disorder of the sub-lattice