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本文对射频溅射法淀积的ａ－ＳｉＣ∶Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究．我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程．在较高的射频功率下淀积的ａ－ＳｉＣ∶Ｈ膜经８００℃６０分钟等时退火后转变为６Ｈ－ＳｉＣ相，该温度低于在低功率下制备的ａ－ＳｉＣ∶Ｈ形成６Ｈ－ＳｉＣ的温度（１０００℃）．高功率可导致６Ｈ－ＳｉＣ形成温度的降低与膜中硅及石墨团簇的消失，同时高能量的氩离子轰击可使膜中氢含量减少及各组分均相．通过改变射频功率，本文研究了氩离子轰击对ａ－ＳｉＣ∶Ｈ膜及形成６Ｈ－ＳｉＣ的影响．
In this paper, a-SiC: H film deposited by RF sputtering was thermally annealed to form 6H-SiC phase. We used infrared transmission spectroscopy, Raman backscattering and X-ray diffraction spectra to study the formation of 6H-SiC during annealing. The a-SiC: H film deposited at a higher RF power was converted to a 6H-SiC phase after isochronal annealing at 800 ° C for 60 minutes, which was lower than that of a-SiC: H prepared at low power to form 6H- Temperature of SiC (1000 ° C). The high power can lead to the decrease of the formation temperature of 6H-SiC and the disappearance of the silicon and graphite clusters in the film. Meanwhile, the high-energy argon ion bombardment can reduce the hydrogen content in the film and make the components homogeneous. By changing the RF power, the effect of argon ion bombardment on a-SiC: H film and formation of 6H-SiC was studied.