a-SiC相关论文
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本文对射频溅射法淀积的ａ－ＳｉＣ∶Ｈ膜热退火形成６Ｈ－ＳｉＣ相进行了研究．我们采用红外透射谱、喇曼背散射谱和Ｘ光衍射谱来研究退火形成６Ｈ－ＳｉＣ的过程．在较高的射......
用射频等离子增强化学气相沉积技术(RF-PECVD)制备非晶碳化硅(a-SiC:H)和不同掺氮量的碳化硅基(a-SiCNx:H)介质薄膜.采用傅里叶红......
The g-values of the ESR signals caused by dangling bonds in a-Si:H, a-SiC:H and a-SiN:H alloy systems have been calculat......
The diffusion of impurities in a p-i-n solar cell is one of causes for the degradation of energy conversion efficiency. ......
本文简述了用α-SiC:H/α-Si:H复合膜钝化硅平面器件的钝化机理,并成功地应用于硅平面小功率晶体管的表面钝化,实验表明,钝化后的......
用俄歇电子能谱(AES)对等离子增强化学汽相淀积(PECVD)氢化非晶碳化硅(a-SiC∶H)薄膜进行了组分的深度剖析、半定量分析以及化学分......
Si/C/B powders were synthesized by carbothermal reduction of xerogels containing boride. Colorless,transparent and monol......
针对热处理对a-Si C：H薄膜的氢扩散和热稳定性的影响,利用二次离子质谱（SIMS）和傅立叶红外谱（FTIR）来分析氢的深度分布和薄膜中Si Hn和C......
