论文部分内容阅读
采用减小栅长的方法可以显著提高In P高电子迁移率晶体管(HEMT)器件的直流和微波性能,并使器件的工作频率上升到太赫兹频段。分别制备了不同栅长的InP HEMT器件,采用T型栅工艺减小器件的寄生栅电阻,并通过减小栅极与漏极的间距进一步减小了漏极寄生电阻。比较了不同栅长尺寸器件的直流、微波和寄生电阻的性能差别。测试结果表明,栅长减小,器件的饱和电流、直流跨导、交流跨导和截止频率越大,相应地,器件的栅电容、延迟时间和寄生电阻越小。最后,对InP HEMT器件进行了建模,模型仿真与测试结果拟合良好。
The method of reducing the gate length can significantly improve the DC and microwave performance of the In P high electron mobility transistor (HEMT) device and raise the operating frequency of the device to the terahertz frequency band. InP HEMT devices with different gate lengths were fabricated respectively. The T-gate process was used to reduce the parasitic gate resistance of the device and the drain parasitic resistance was further reduced by reducing the spacing between gate and drain. The performance differences between DC, microwave and parasitic resistance of different gate length devices are compared. The test results show that the gate length decreases, the device saturation current, DC transconductance, AC transconductance and cut-off frequency of the larger, accordingly, the device gate capacitance, delay time and parasitic resistance smaller. Finally, the InP HEMT device was modeled, and the model simulation and test results fit well.