论文部分内容阅读
研究了高温和大电流应力对 ＴｉＡｌ／ ＧａＡｓ和 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管 Ⅰ～ Ⅴ特性及对 Ｒｉｃｈａｒｄｓｏｎ图 的影响．研究发现，随着应力时间的增加，在 Ｒｉｃｈａｒｄｓｏｎ图上，对ＴｉＡｌ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度快速降低， Ｒｉｃｈａｒｄｓｏｎ常数和二极管的面积之积 ＳＡ~＊也快速减少，而 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度和 ＳＡ~＊先快速增 加，后趋于稳定常数．在Ⅰ～Ⅴ曲线上，ＴｉＡｌ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管反向饱和电流增加，ＴｉｐｔＡｕ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ 二极管反向饱和电流先快速减少，后趋于常数．这是由于在金属／ ＧａＡｓ界面形成了金属间化合物的结果．
The effects of high temperature and high current stress on the characteristics of Ⅰ ~ Ⅴ and the Richardson diagram of TiAl / GaAs and TiPtAu / GaAs Schottky diodes were investigated. The results show that with increasing stress time, the barrier height of TiAl / GaAs Schottky diodes decreases rapidly on the Richardson diagram, and the product of the Richardson constant and diode area SA * also decreases rapidly. The TiPtAu / GaAs Schottky diode barrier Height and SA ~ * quickly increase first, then tends to stability constant. On the Ⅰ ~ V curves, the reverse saturation current of TiAl / GaAs Schottky diode increases and the reverse saturation current of TiptAu / GaAs Schottky diodes decreases rapidly at first, then tends to constant. This is due to the formation of intermetallic compounds at the metal / GaAs interface.