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美国TriQuint Semiconductor公司和Lockheed Martin公司开发出一种可提高功率、效率和稳定性的先进GaN工艺方法。 GaN HEMT器件具有高功率,用于相控阵雷达、电子战及通信系统。提高该器件的
TriQuint Semiconductor and Lockheed Martin have developed an advanced GaN process that increases power, efficiency, and stability. GaN HEMT devices have high power for phased array radar, electronic warfare and communications systems. Improve the device’s