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本文介绍了LiNbO_3、LiTaO_3、Bi_(12)GeO_(20)及石英等几种压电氧化物晶体的反应离子刻蚀(RIE)。在平板径流式反应器中,当气压为3×10~(-2)托,靶功率密度为1.6～2w/cm~2时,用SF_6气体刻蚀LiNbO_3、LiTaO_3、Bi_(12)GeO_(20)的刻速分别为220、270、280/分,用CCI_2F_2刻蚀石英、Bi_(12)GeO_(20)的刻速分别为580、540/分。在同一实验装置的工艺条件下,还进行了Ar气溅射及SF_6等离子体刻蚀对比实验,并探讨了RIE中刻蚀剂、掩膜、射频功率及气压等工艺参量对刻蚀特性的影响。实验结果表明:压电氧化物晶体的RIE是令人满意的;SF_6是一种较理想的刻蚀剂。
In this paper, reactive ion etching (RIE) of several piezoelectric oxide crystals, such as LiNbO_3, LiTaO_3, Bi_ (12) GeO_ (20) and quartz, In the flat plate radial flow reactor, when the pressure is 3 × 10 ~ (-2) torr and the target power density is 1.6 ~ 2w / cm ~ 2, Li_2O_3, LiTaO_3, Bi_ (12) GeO_ ) Were 220,270,280 / min respectively. The etching rate of quartz was measured by CCI_2F_2. The engraved rates of Bi_ (12) GeO_ (20) were 580,540 / min, respectively. Under the same experimental setup, Ar gas sputtering and SF6 plasma etching experiments were also conducted, and the influence of etching parameters such as etchant, mask, RF power and pressure on the etching characteristics was also discussed . The experimental results show that the RIE of piezoelectric oxide crystal is satisfactory. SF_6 is an ideal etchant.