论文部分内容阅读
本文介绍一种新的干腐蚀技术,即铝的“反应掩蔽溅射腐蚀”技术。这种工艺技术可刻蚀微细线条的铝和铝-铜-硅合金膜图形,没有目前通用的反应溅射腐蚀方法存在的许多麻烦问题。这种技术把淀积和腐蚀包含在一个工艺过程之中,在三氧化二铝、铝和铝-铜-硅合金被腐蚀的同时,所有其他材料表面却被涂敷上一层SiOx膜。这在本质上产生特别大(铝/掩模和铝/衬底)的腐蚀速率比。此外,腐蚀气体不含有通常会产生浸蚀和钻蚀现象的氯。事实上,这种腐蚀技术兼有反应溅射腐蚀和非反应溅射腐蚀的优点。本文介绍的腐蚀气体是四氟化硅/氧混合气体。研究结果表明,大多数添加的杂质气体对腐蚀的影响非常小。但是,添加水或氢气则可明显地影响腐蚀特性。文章示出了用光致抗蚀剂作掩蔽层采用四氟化硅/氧/氢混合气体进行反应掩蔽溅射腐蚀的典型腐蚀剖面。
This article describes a new dry etching technique, the aluminum “reactive masking sputter etching” technique. This process can etch fine-grained aluminum and aluminum-copper-silicon alloy film patterns without the hassle of the current common reactive sputter etching methods. This technology includes deposition and corrosion in a single process. All aluminum oxide, aluminum and aluminum-copper-silicon alloys are etched while all other surfaces are coated with a layer of SiOx. This essentially results in a particularly large (aluminum / mask and aluminum / substrate) etch rate ratio. In addition, corrosive gases do not contain chlorine, which usually causes erosion and undercutting. In fact, this etching technique combines the advantages of reactive sputter etching and non-reactive sputter etching. The corrosive gas described in this article is a silicon tetrafluoride / oxygen mixed gas. The results show that the effect of most of the added impurity gases on corrosion is very small. However, adding water or hydrogen can significantly affect the corrosion characteristics. The article shows a typical etch profile of a reactive masked sputter etch using a silicon tetrafluoride / oxygen / hydrogen mixed gas with a photoresist as a masking layer.