160.6000相关论文
In this work, Er-doped aluminum nitride (AlN), Pr-doped AlN, and Er, Pr co-doped AlN thin films were prepared by ion imp......
A three-dimensional model of GaAs/AlGaAs quantum double rings in the lateral static electric field is investigated theor......
Modulation properties of terahertz waves going through a light excited high resistivity silicon wafer are analyzed and m......
The photoelectric properties of In0.3Ga0.7As solar cells applied in laser wireless power transmission (LWPT) were studie......
Parallel fabrication of silicon concave microlens array by femtosecond laser irradiation and mixed a
A method of multi-beam femtosecond laser irradiation combined with modified HF-...
Using two-step method InP epilayers were grown on GaAs(100) substrates by low-pressure metalorganic chemical vapor depos......
Compared with the traditional image intensifier with phosphor screen readout, the photon-counting imaging detector with ......
A two-dimensional model of a metal-semiconductor-metal (MSM) ZnO-based photodetector (PD) is developed. The PD is based ......
A novel fusion bonding method between silicon and glass with Nd:YAG laser is described. This method overcomes the movabl......
In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are r......
Fabrication of grating structures on silicon carbide by femtosecond laser irradiation and wet etchin
A method for fabricating deep grating structures on a silicon carbide (SiC) surface by a femtosecond laser and chemical-......
We report the formation dynamics of periodic ripples on GaAs induced by femtosecond laser pulses (800 nm, 50 fs) via a c......
The temperature-dependent photoluminescence (PL) spectra of BaIn2O4, prepared by coprecipitation, are measured and discu......
Ultrafast electromagnetic waves radiated from semiconductor material under high electric fields and photoexcited by femt......
Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion im
Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV ......
1689-nm diode lasers used in medical apparatus have been fabricated and characterized. The lasers had pnpn InP current c......
The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector with diffe......
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 μm. Using two-step growth method a......
The intensifying process of polarization effect at room temperature in a pixellated Cadmium zinc telluride (CdZnTe) mono......
A novel coupled quantum well structure with large field-induced refractive index change and low abso
A novel coupled quantum well structure --- quasi-symmetric coupled quantum well (QSCQW) is proposed. In the case of low ......
ZnO is an n-type semiconductor having a hexagonal wurtzite structure. By X-ray diffraction (XRD) and scanning electron m......
SiO...
Generally, Ag and N can be taken as relatively better candidates for p-type ZnO. In this letter, we investigate the elec......
Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high outp
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within......
We demonstrate a strain compensated long lifetime semiconductor saturable absorber mirror (SESAM) with a high modulation......
The synthesis of zinc oxide (ZnO) nanowires is achieved by vapor phase transportation (VPT) method. The designed quartz ......
