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提出了一种新的基于电荷泵技术和直流电流法的改进方法 ,用于提取LDDn MOSFET沟道区与漏区的界面陷阱产生 .这种方法对于初始样品以及热载流子应力退化后的样品都适用 .采用这种方法可以准确地确定界面陷阱在沟道区与漏区的产生 ,从而有利于更深入地研究LDD结构器件的退化机制 .
A new improved method based on charge pump technique and DC current method is proposed to extract the interface traps in the channel region and the drain region of the LDDn MOSFET.This method is very useful for the initial sample and hot carrier stress degeneration samples Are applicable.Using this method, the occurrence of interface traps in the channel region and the drain region can be accurately determined, which is conducive to a more in-depth study of the degradation mechanism of LDD devices.